ON Semiconductor Corporation (ON) Earnings Call Transcript & Summary

Good morning, everyone, and welcome to today's webinar on the analysis of residential bidirectional solar inverters with coupled battery storage. I'm Kyli Miller with onsemi, and I'll be your moderator today. In today's session, we will review market trends and standards for residential systems, along with the benefits of bidirectional solar inverters and how onsemi's latest devices such as Field Stop 7 IGBTs and third-generation SiC MOSFETs offer significant performance improvements. At the end of the webinar, we'll be holding a Q&A session to answer any questions you may have. You can type your questions into the Ask a Question box on your right. A recording of the webinar will be shared with you via e-mail. Now let's meet today's presenter. Hunter Freberg is a Technical Marketing Engineer at onsemi. He is covering energy, infrastructure, industrial automation and automotive applications for the Power Solutions Group. Now let's go ahead and get started. Hunter, the floor is yours.

Thank you, Kyli. So as you said, first and foremost, we'll kick off with a global market overview for the residential solar and energy storage market. So for residential solar inverters in their market size, as of 2022, it's $5.2 billion. And for battery storage for residential, it's $38.9 billion. So these are huge markets with tons of investment, new companies popping up. And you can see the compound annual growth rate is 11.3% and 18.3%, respectively, over the next 10 years. So huge, huge growth in these industries. For the residential string inverter versus microinverter market, and this particular presentation, will be focusing on the string inverters. You can see that they're close to 50-50. It's a little bit more on the string inverter side. And while this market is dominated by really a couple of key players. It's no surprise. You see Enphase for microinverters, you see SolarEdge for string inverters. But again, due to the substantial growth in these markets and the investment and the money that's available, there's a lot of new companies that are popping up and older companies that are now considering getting into this solar inverter and battery energy storage for residential application market space. So for the basic residential PV system components and how they interface with one another. You have your solar array. So you have a number of panels that are connected and maybe a series or a parallel configuration, depending on what voltage input and current input you're looking for. That will go to a charge controller, which is a DC to DC device, may be an older PWM style device, which is much simpler, or it might be a MPPT charge controller or maximum power point tracking controller. Essentially what that device does is that depending on your irradiance as well as the temperature of the solar cell, it will adjust the voltage level so that your power output is at its maximum. That will go to your battery bank in a DC-coupled system. That will go to your solar inverter, DC to AC, so that you can then connect to your AC mains and then power your AC loads in your house. So with this basic setup, you have a number of stand-alone devices. And it's really a pro or a con depends on the user -- the end user, whether you look for individual components. So if one thing breaks, you can just replace that one thing. Or in all-in-one systems, bidirectional systems like what we'll be talking about today, where you have just one system, one point of failure, but again, it may be preferable for some customers. This is unidirectional in nature, so you need bidirectionality in your charging topologies in order to couple with an AC source. It's typically more expensive to have all of these individual components, these stand-alone devices for your charge controller, your battery management system, your battery bank, your solar inverter. And while they do have certain monitoring functions, these devices may be unresponsive to grid fluctuations without any additional devices or additional monitoring circuits. So what we see in this industry is a trend towards all-in-one bidirectional inverters. So it's a consolidation of all of these different technologies. So we have, again, that maximum power point tracker charge controller, DC-to-DC device; the battery charger, which is a DC to DC or AC to DC device; bidirectional; and the bidirectional solar inverter, the DC to AC portion as well. And again, all of that consolidated into one device. So this all-in-one solar inverter that includes in that MPPT battery charger, hybridized device, so it could be utilized for grid-tied applications as well as off grid applications. And they include a number of protection features. So again, it's an intelligent solution with different system monitoring functions like OCP, over current overcurrent protection; OVP, over voltage protection; UVP, under voltage protection; SCP, short circuit protection. Typically have some grid monitoring features so that you can monitor when there's blackouts to disconnect the system from the grid. And this is really important for anti-islanding. So you have instances where the grid goes down, but your house is still up and producing power. And it's potentially a dangerous thing for -- if a worker is to go out and -- to repair any faults. While that system is down on the grid side, it's still live from your side. So if you're feeding power back to the grid, it could potentially be dangerous. So it's good to have some kind of transfer switch within these devices to disconnect from the grid when it monitors blackouts or brownouts. These are often less expensive as they integrate all of these devices into one package. Again, it's much easier to install and much lower install costs. You need much less wire and far fewer connectors, and you can more readily add storage to these systems. And what you'll see is that a lot of these systems may either be AC coupled or DC coupling capable, or maybe a mix of the two. So a slightly more detailed view of how these various inputs interface with this all-in-one device, a single-phase bidirectional inverter. You'll typically see either single phase 120-volt bidirectional inverters for residential applications. You also may see split phase 240-volt for these residential applications as well. Typically, in the 3-kilowatt to 18-kilowatt range. So we're starting to get into this higher power inverters as the power demand for users increases over time. So your solar array is typically going to be comparable to the power rating on that inverter. Your PV input into that inverter, it's typically going to be on the order of up to 500 volts, 600 volts, 700 volts in that general range, which allows you to series connect a number of panels to get up to that level. So for instance, I'll tell you a story. I just got solar on my house, and we utilize REC 405-watt panels. Those have a 48-volt open-circuit voltage and a 10-amp short-circuit current. So basically what that means is that for an all-in-one inverter with a 500-volt PV input, you could really series up to about 10 panels. You'll typically see about 15 amps per channel for the rating and maybe 2 to 4 MPPT inputs per bidirectional inverter. So you include these inputs so that you forego the need for like a combiner box, for instance, which you would need to connect those series arrays in order to feed into your bidirectional inverter. Then you have your battery bank. For residential applications, this varies widely as far as what capacity you need. It really depends on what you're aiming for, for your offset. Are you trying to offset 100% of your utilization? Or are you trying to offset a small amount, maybe only 10% of your utilization with this battery bank? Most of the systems that you see are going to be rated for 48 volts, but we do see higher voltage systems in development, higher voltage battery banks in that interface up to an on the range of 400 volts. Really depends largely if you're doing DC-coupled or AC-coupled system, for instance. And this is where the bidirectional charging comes into play. So you're able to discharge from your battery bank to the all-in-one inverter to go out to your loads. You can have a condition where the solar input is providing power along with the battery. Or for instance, if you don't have any solar, if it's night time, then you're just supplying power with your battery. And then you'll also see a dedicated AC input for 120-volt, 240-volt that you can plug into these all-in-ones so that you can not only charge the battery bank with the solar array, but also charge the battery bank with some kind of AC input, again, whether it's coming directly from the grid, from your house or perhaps a secondary generator, for instance. And then again, all of these inputs are going to feed out to your main panel to either send power back to the grid or to power the loads within your home. So we really have two different types of battery storage integration into these devices. Like I said, you have AC-coupled versus DC-coupled systems. So your AC-coupled systems may just be a hybrid solar inverter or all-in-one that includes the charge controller, boost charge controller, along with the inverter. And then you'll have a bidirectional inverter and AC to DC device, along with an optional DC to DC device. It really depends on what your battery voltage is. If this AC to DC device is developed to interface directly with your battery voltage or if you need to add that additional device in order to either buck or boost the voltage level to feed into your battery. And then you also have DC-coupled systems, which basically have a bidirectional DC to DC device that's in line with the charge controller before the inverter, as you saw with the very basic implementation. So with these DC systems, they're typically -- or DC-coupled systems, they're typically found, when you install them initially, so it's very difficult to add capacity later on. Whereas with the AC-coupled systems, it's more -- or it's easier to add capacity in your battery bank later on. If your particular solar inverter isn't sized for it. It requires an additional conversion step like we were saying. So you may need this additional DC to DC charger in order to charge your battery, whereas you don't necessarily need that additional device with a DC-coupled system. So these will typically tend to have higher efficiency. The fewer blocks that you have, the fewer power conversion blocks you have, the higher efficiency you will have. There's a number of recommended topologies that you'll see in the industry for both the inverter, the DC to AC portion, as well as the converter, the DC to DC portion, and I'll talk about a couple of these briefly. You have your standard H-bridge or full bridge device. It has much simpler design and control. There's far fewer parts. But you have the issues of typically a much larger inductor, much lower efficiency and worst total harmonic distortion or higher distortion from those harmonics. We also have the HERIC inverter, sort of a step-up moving into 3-level topologies. It's largely -- it's a subset of a TNPC topology, which is a neutral point clamped topology. So it's a slightly more complex control for these power supplies. There's more switches, so it has higher cost. But you have the benefit of smaller inductors, smaller capacitor, higher efficiency and improved or lower total harmonic distortion. Then moving on to the H6.5, another 3-level topology. The benefits of these is lower switching stress. So essentially a 3-level topology, you can use switches that are rated at half the bus voltage. So if you have a voltage bus that needs 1,200-volt switches in a 2-level topology, you only need 650-volt switches and 3-level topology. And you can see that with an H6.5 module that we have, for instance, that utilizes our 650-volt Field Stop 4 IGBTs. Again, similar benefits to the HERIC in that you have a smaller inductor, higher efficiency and better total harmonic distortion with this topology. So that's for the DC to AC, the inverter portion. For the converter, you'll see synchronous buck, synchronous boost or maybe a synchronous buck-boost like a flyback that's utilized. It's typically for cheaper inverters as the control algorithms are much simpler for these topologies. And it's a simpler design. You can see fewer parts. But the issue with the synchronous buck and synchronous boost converters is that they're nonisolated. They have lower efficiency. So you can forego this with like a flyback, for instance, buck-boost that has a coupled inductor that would act as your isolation. But with the standard buck-boost topologies, you do not have that isolation. So they're not necessarily recommended for the highest power, highest efficiency applications in solar inverters. Then you have these 2 topologies. You have dual active bridge, or DAB, and resonant CLLC circuits. These are preferred for higher efficiency -- much higher efficiency as they're soft switching topologies. So basically, what that means is that they implement a resonant circuit, which you can see featured here, from the inductor between your primary side and your secondary side, as well as the capacitor and the inductor here on this primary side in the CLLC, and then mirrored as well over here on the secondary side in the CLLC. So soft switching substantially reduces your switching losses by implementing 0 voltage switching during turn on and 0 current switching during turn off, is very low conduction losses, and they work for a wide voltage range. But really, the issue that you'll see with these soft switching topologies like, the dual active bridge, the resonant LLC -- CLLC, and phase shifted topologies is that they may have poor regulation at light loads on the order of maybe 2% or 5%. And what I'll tell you is that if you are a solar inverter designer and you're really not sure what topology to consider for your design, I highly encourage you to check out our Elite Power Simulator and our Self-Service PLECS Model Generator. So the these simulation tools, all of the topologies that I just featured for the inverter and the converter for bidirectional implementation into these solar inverters and chargers is found within this simulator. So you can take our latest silicon carbide devices, soon you'll be able to take our latest IGBTs as well, and integrate them into these topologies to test the efficiency of the topologies and how the devices perform within them. It's a very, very useful tool in the day where a lot more engineers are working from home, they need more flexibility. If you're a startup, you may have less access to testing equipment, expensive testing equipment. So this tool really aims to provide accurate results through a number of different features. And it mimics more what you'll see in a real environment, a non-idealized environment, as it includes many of the different parasitics and the setups that are found within a double pulse tester to get accurate readouts of how these devices perform. So you can see here a number of different highlights for Elite Power Simulator. So again, a broad range of circuit topologies over 32 different topologies between converters and inverters for these different applications. And again, here, we're focusing on solar inverters. It has corner simulation capability, utilizing our PLECS models that are built for not just nominal cases, but also for things that you may see in the manufacturing environment, deviance, where you have maybe worst case conduction losses, best case switching losses, or the inverse of that, worst-case switching losses and best case conduction losses. We also have a custom PLECS model upload. So you can take your own PLECS models of these devices or thermal and electrical models to put into the simulation, or you can utilize our Self-Service PLECS Model Generator to get the most accurate models. They're valid for soft switching models. So again, this dual active bridge in the CLLC topology that I just discussed, these are soft switching topologies. The issue that you'll see with many of our competitors' tools is that they are not built for soft switching topologies, so you will not get an accurate representation of what your efficiency will look like in your design if you're using their tools. You will with ours, however. So that's it for our simulation tools. Next, I'll kind of jump into the next -- or the latest technologies that we have available for these solar inverter designs. So first and foremost, our latest Field Stop 7 IGBTs. We have 1,200-volt devices that we released. These are good for 2-level topologies. They're very high efficiency and built for very power-dense applications like we see again with higher power solar inverters. They're split into two categories. We have the R-Series, which is for motion control applications where you need very low VCE saturation in your IGBTs. And then we also have the FAST series. These are the devices, the S-Series that are catered towards switch and power supplies, again, solar inverter applications. And you can see the trade-off here. So if you're optimizing for low VCE SAT you may have a little bit higher switching losses. If you're optimizing for low switching losses, you may have a little bit higher VCE SAT. You can see here, us versus some of our competitors in the bottom left of the screen. For our FAST device, the turnoff losses, the EOF losses at maximum operating temperature, 175 degrees Celsius, down to 57 micro joules per amp, which is substantially lower than our next 2 best competitors, competition A and competition B. So again, the S-Series is the ones that we care about in solar inverter applications. And we have a number of different packages available. We have the standard Through Hole T0-247 devices, as well as the devices where you remove the Through Hole so that you have a slightly larger area on the FET to sink heat, better heat dissipation. And then we also have a number of power modules available that integrate these -- the die into various configurations, various topologies to make it much easier to drop into your designs and to forego the need to go through PCB layout exercises, worry about creepage, worry about all the other issues that you may encounter when you're doing discrete designs. Again, for our 1,200-volt Field Stop 7 IGBTs, at the moment, they're split into the T0-247-3 lead and the Power T0-247-3 lead, again, that device with the hole removed, like I mentioned, and the S-Series devices featured in this left column here, as well as over here are going to be those devices for solar inverter applications. And again, size depending on the current rating that you need, ranging all the way from 40 amps, all the way up to 140 amps for the current rating of these IGBTs. It will tell you as well, releasing early 2024, we have a number of 4 lead power T0-247 IGBTs that are releasing. And the benefit here with the 4 lead devices is improved switching losses. So your turn on losses with the 4 lead by adding this additional pin, Kelvin source pin or Driver pin reduces your turn on losses by about 60% and your turn off losses by about 10% to 15%. And again, I should say that in high-frequency applications, like we see with switch mode power supplies, your switching losses are going to be the predominant losses. So there really is a need to utilize those 4 lead devices over the 3 leads in order to get the highest efficiency. So that's it for our IGBTs. Next, I'll jump into our silicon carbide products. Why do we need silicon carbide? Well, silicon versus silicon carbide, and silicon carbide drives increased power density over previous silicon-based designs. You have simpler topologies, so you have these complex topologies like you see here, that utilize maybe 650-volt or 600-volt superjunction silicon FETs or 650-volt IGBTs. Being able to develop switches with much lower RDS(on) and higher breakdown voltages allows us to move to much simpler topologies like 2-level topologies like you see with the dual active bridge, with the other resonant type of topologies. You can go to much higher switching frequency. The gate charge that's required to turn these devices completely on for silicon carbide is much, much lower. And basically, what that means is that you can run at much higher switching frequency. If you run at much higher switching frequency, your passives can get much smaller. So you can see here a reduction in the size of this inductor. If you adopt silicon carbide into your designs and you have much higher switching frequency in your designs, you can reduce the size of those inductors quite a bit. And those tend to be one of the larger components that you'll have within your designs. So if you're aiming at developing the smallest solar inverter possible, higher switching frequency is preferred. And then it also provides a reduction in the need for cooling. So you will also obviously have to cool these devices. But due to the material properties of silicon carbide versus silicon, the complexity of cooling in these designs is far less. So overall, we're aiming at smaller size, lighter weight, and cost-saving benefits by adopting silicon carbide into these energy infrastructure applications like solar inverters. So comparison of the material properties between silicon and silicon carbide. First and foremost, you can see that the band gap energy is about 3x higher with silicon carbide as it is with silicon. So 1.12 electron volts with silicon versus 3.26 electron volts with silicon carbide. Basically, what this means is that silicon carbide acts more like an insulator than it does a conductor. Due to that, we can develop much thinner epitaxial layers for the silicon carbide devices so that your resistance of the devices is about 90% lower, or honestly, about 3 orders of magnitude lower than a comparable high-voltage silicon FET, so much, much better resistance. And you can also develop, again, higher voltage devices. If you have a device that acts more like an insulator and therefore has a higher critical electric field, it's about 10x higher with silicon carbide versus silicon, it's easier to develop these high-voltage devices so that you don't have a breakdown of your device at these high voltages. Next, the saturated electron velocity is about 2x higher in silicon carbide versus silicon. Basically, saturated electron velocity, how quickly can the charges move through the material? The charges can move through the material more quickly. You have higher current density. And it also relates to the switching speed. So the devices can move in and out of the FET more quickly and your switching speed can increase, along with that lower gate charge that's required to move the device into saturation. And therefore, you can substantially reduce the size of those boost inductors that are needed in solar inverter topologies. And then lastly, like we were saying, the thermal conductivity of silicon versus silicon carbide. Silicon carbide is about 3x higher than silicon. So if you had a system that was previously water cooled, you may be able to move it to a natural or forced convection, a standard heat sink, aluminum or copper heat sink with a silicon carbide-based design. Or if you previously had a very large heat sink in a silicon-based design, moving to silicon carbide, you could opt for a smaller heat sink. And again, therefore, the very large solar inverter that you may need to mount in your garage or on the side of your house gets a lot smaller. It's much easier to install, and it's much cheaper as the raw material that's required to build that device is much lower. Next, I'll talk about onsemi's EliteSiC manufacturing leadership, why we are a leader in the space of silicon carbide? What we call from substrate to systems or from power to products, we are a fully vertically integrated company. So we go all the way from manufacturing the bulls themselves and substrates into the fab. At the moment, we have silicon carbide planar devices. We are working on trench devices for our next-generation silicon carbide devices. But what we do find is that we felt planar had more optimization that needed to occur before we moved to trench. And you'll see that with some of our competitors. Our performance of our planar devices are comparable or better in some parameters than our competitors that move to trench perhaps too quickly. So we are on 6-inch fabs or 150-millimeter, and we are in the process of migrating to 200-millimeter or 8-inch wafers. And then we have a number of devices that we package those die into. So whether it's the standard T0-247 that you see with IGBTs, good use for a drop in for a 3-lead IGBT, or if it's in the modules, the power integrated modules that I've discussed briefly and I'll go into in a little bit more detail, it's a lot of different packaging options for silicon carbide devices in industry standard pinouts as well. So for fears of single-sourced products, there's no worry with onsemi for that. And again, we have deep application system support for automotive and for energy infrastructure applications for our devices. So this just kind of shows the vertical integration breakdown of our company. You can see going from the silicon and carbide powders placed into the furnace to heat and form the bulls, which are then sliced into wafers. You have your epitaxial process and device fabrication for creating that die that goes into those packages, then dicing up that wafer, packaging those into discretes or into modules for use in these applications like a solar power -- solar inverter application. So for our capacity and the expansion that we've made and therefore, how our market share is tracked correspondingly, from quarter 1 of 2022 forecasted through Q4 of 2023, this quarter, we've seen a 10x increase in our capacity. What that's done is it's resulted in our market share in silicon carbide from 2021 to 2023 increasing substantially. So from 2021, we were at about 7% market share for silicon carbide. 2022, we bumped up to 11%, and we are forecasted through 2023 to be at 28% market share, which is substantial. In addition to that, we have a new building that actually just finished. You may have seen the notice on LinkedIn. So this secondary building in our Bucheon facility in Korea. By adding this facility, we'll be able to double our existing increased capacity for 2024 and 2025. For our quality and for the robustness of our planar designs, I suppose it doesn't really mean a whole lot if you make a lot of devices, if they don't perform well, if we don't back them up with quality. We do a number of different things during the manufacturing process like, in-process control and burn-in, defect scanning, and 100% avalanche testing of all dies during that manufacturing process, which ultimately results in devices that have no drift in their threshold or parameters, very high reliability gate oxides and devices that can be AEC-Q qualified and industrial qualified as well. That's it for our manufacturing. Now, for our discretes and the devices that we recommend for solar inverter applications from our EliteSiC portfolio. You can see featured here all of the silicon carbide devices that we have, all the way down to our first-generation M1 MOSFETs and our first-generation D1 diodes. But to our latest devices, we have our third-generation M3 and D3 devices. Similarly to the IGBTs, our third-generation silicon carbide products are separated into 2 categories, an S-Series, high switching speed, again, built for these solar inverter applications. And then an M3P or M3E devices, which are built for the lowest resistance and therefore, lowest conduction losses and high short circuit withstand time. So this is good for motion control applications, but the devices that we care about for solar inverter applications, high-power switch mode power supplies is going to be the M3S devices, which we have available in 1,200-volt and 650-volt. And then for our D3 diodes in 1,200-volt and our D2 at 650-volt, built for very low charge and forward voltage. So some more benefits of this third-generation technology. They're optimized for high temperature operation. So you can see here with our MOSFETs, for instance, the reverse recovery in the bottom left corner in this figure. It's virtually independent of changes in temperature, which is ideal for high-temperature, high-power applications. We have improved parasitic capacitances for high-frequency, high-energy applications. So you can see in these figures on the bottom here for output capacitance, input capacitance and reverse capacitance. M3S is quite a bit lower than M1. And we also have different die size, large die available with low RDS(on) for these devices. So even though the M3S is optimized for switching speed, we have large die available for low RDS(on). So for our 650-volt devices, these are soon to release, you can see our 650-volt device versus our second-generation, first-generation M1 silicon carbide and our competitors. So for these 2 key figures of merit, we typically call out and you may see on some competitors' comparisons as well. This is going to be the RDS(on) by the gate charge and the RDS(on) by the energy of your Alpha Capacitor. With these devices for the best switching performance, we're looking for low gate charge, low energy from your Alpha Capacitor. And as a result, we're 44% lower and 30% lower, respectively, moving from our first-generation to our third-generation 650-volt devices. For our 1,200-volt devices, you can see an overview of the family here available in a T0-247-3-lead, 4-lead, a surface mounting D2PAK 7-Lead. And then a new package that we're working on which is a DPAK device or a top cool device. This is a surface mount device with an exposed pad, so that you can have much higher power density and potentially smaller solar inverters. We have samples available for these DPAK devices as well as for our next-generation M3 die. And for those 650-volt devices that I mentioned just a couple of slides ago, they're also available in the 3-lead, the 4-lead and the D2PAK 7-Lead. Sort of the standard packages that you see in the industry for silicon carbide products. Similarly, for our 650-volt switches, you can see here for our 1,200-volt devices, those same figures of merit. So the RDS(on) is comparable between our first generation, third generation and one of our competitors' latest third-generation devices. But really the key figures here for switching performance, gate charge and the energy of your Alpha Capacitor. And we're 31% lower and 44% lower, respectively, moving from our first generation to our third generation. And while I don't have it called out on these tables, you can see that there's a reduction still from our competitors as well, 3.6 to 2.9 and 0.86 to 0.77 improvement in performance with our third generation devices over our competitors and their corresponding latest devices. So for this top cool DPAK device, the surface mount device, proposition that we have here is essentially higher thermal performance and higher power density. So with your traditional surface mount devices, we're using those very small inverters. The standard package technology has a very long heat path. You go from the MOSFET, out of your leads, through the solder into the PCB, through some thermal vias, into the thermal interface material that may then either be mounted to a heat sink or to the grounded aluminum housing that your board is mounted to. It's a lot of layers to fight through. And therefore, you can substantially improve the thermal performance and dissipation by having a shorter heat path. So instead of having to fight through all of those different layers, you can just go from the MOSFET and its exposed path, some kind of isolated thermal interface material, and then straight to the heat sink. So much, much more thermally efficient devices. So for your smallest solar inverter designs, if you're looking to increase power density, top cool DPAK devices may be an option. Now I'll talk about a little bit of our power integrated modules that include silicon carbide. So we have them available in a number of different packages, our F-Series as well as our Q-Series. So F1, F2, F5, Q0, Q1 and Q2. Built for different applications, but there is a lot of similarity between the different modules. Basically, it's just different package sizes for higher power density or for greater performance, like lower resistance. And all of these devices come either in your standard solder pins, so you can drop it directly onto the board and solder it, or with press fit pin. So it's like an expanding clip that when you push it into place in the board, it locks it into place. And also, we can either provide the modules with our own thermal interface material or without, if you prefer to apply your own. So what we aim to do with power modules is to simplify development. Through our continuous investment in enhancing these packaging technologies and through accurate thermal modeling that you see with the Self-Service PLECS Model Generator and the power simulator, for instance. We can reduce cooling effort and extend lifetime of systems due to the optimized die size, the layout that's within the module, as well as the preapplied thermal interface material. We can enhance robustness in harsh environments due to the patented termination structure of the modules. And we also have off-the-shelf and tailored solutions for appropriate business cases. So a product that I would like to highlight is our latest 1,200-volt 3 and 4 milliohm 2 products, half-bridge full SiC modules. So there's 2 switches included into these modules. It's an industry standard pinout. And for this industry standard pinout, we have the lowest RDS(on) half-bridge module in an F2 package. And while I did say previously that in higher power, higher switching frequency applications like you might see with solar inverters, switching losses dominate, conduction losses do still play a key role. So these devices have very low resistance for very low conduction losses and they integrate our third-generation M3S die for fantastic switching performance. So overall, what we aim to do with modules is shorten time to market for our customers, ensure quality and reliability and scalability and designs. One such module that actually includes our IGBTs that I'll reference is this H6.5 module. So we've done quite a few designs -- assisted customers in quite a few designs for single phase solar inverters -- bidirectional solar inverters that include this H6.5 topology that I talked about previously at the beginning. We have it available in a 50 amp as well as a 75 amp current rating. So this includes our Field Stop 4 IGBTs as well as the corresponding diodes. And we are working on some other 3-level topologies that include our third-generation silicon carbide devices to go along with these modules. So for an overview of our full silicon carbide module road map, you can see we have a number of 1,200-volt devices that are released, both in a -- or I should say, all in a half-bridge 2 switch, full bridge 4 switch or 6 pack 6 switch configuration in F1 as well as F2 packages. And we are adopting our latest third-generation devices, as I said, into these packages as well. We have a number of modules that are already released, but the rest of what you see here features in red will be released by the end of this quarter. And we do also have in plan to develop modules with that 650-volt M3S devices that I mentioned previously. So use cases for different package types what you may see in your use case. T0-247-3 Leads are ideal for replacement for IGBTs with a nonisolated driver. So our silicon carbide devices work with the same gate drive voltage that's utilized for IGBTs and therefore, it can be a replacement for them. And you have the TO-247-4 Lead devices and include that Kelvin source pin. And what you have here again is an improvement in the switching losses, about 60% reduction in your turn on losses and about 10% to 15% in your turn off losses. May require a little bit of redesign. If you're not swapping it in for a 4-Lead IGBT. Then for our surface mount device, the D2PAK 7-Lead also includes the Kelvin source pin for improved driver losses. And it's recommended for surface mount applications, but the heat goes through the PCB. Again, you could potentially offer top cool DPAK devices in order to alleviate any reliability issues with sinking excessive heat through the PCB. And then for our modules, these are recommended for the highest power density applications, where, again, you'll have the heat sink mounted on top of the module, similar to a top cool device. And again, due to the optimized die size and layout that we put into the package, much better performance. So as an example or a loss example that you may see, we feature here a 20-amp hard switch full bridge. So it would be like the inverter topology that I showed all the way back at the beginning and a 50% duty cycle. So you can see the power condition for all these different devices is the same. But due to the switching frequency that you opt for, your switching losses are substantially reduced. So by moving from discretes to modules, faster switching allows for lower module losses or discrete losses in a more compact end product. Having a more thermally efficient device means that you can run at much higher switching frequency before the devices overheat. So you could either again reduce your switching losses for higher switching frequency or have greater power capability for the same switching frequency. And then lastly, I'll talk a little bit about our gate drivers. So if you have a MOSFET, whether it's silicon, silicon carbide, it doesn't matter. If you have a transistor it has to have a corresponding gate driver. Basically, it's the device that sends a signal to turn the FET on or off. So with our gate drivers, they work just fine with 0 to 15 volts. And then you'll typically see in IGBT applications, they are a great drop in replacement for solar inverter customers that are migrating away from solar inverters or migrating away from IGBTs to silicon carbide and don't want to have to go through extensive redesigns maybe quite yet. But what we see with our silicon carbide devices is that they're optimized to work a little bit outside of that voltage range for some performance improvements. So if you increase your turn on voltage from 15 volts to 18 volts, you have better efficiency. So your conduction losses are about 25% lower. Your turn on losses are about 25% lower, and your turn off losses are about 3% lower. There's even further performance benefit by reducing your turn off voltage from 0 volts to negative 3 volts. This is for the absolute best efficiency, where your turn on losses will continue to lower by about 3%. And your turn off losses will lower by 25% even further. So in addition to these performance benefits, the reason why we go from 0 volts to negative 3 volts for the turn on is protection against any kind of erroneous turn on events. All of the switches in your particular topology have sort of their own dV/dt, dI/dt, and they may accidentally turn on an adjacent switch in the topology due to that. So by dropping from 0 volts to negative 3 volts, you can protect against maybe the threshold of that particular FET going a little bit too high. The threshold voltage of silicon carbide FETs is about 3 volts. So we protect against again any kind of erroneous turn on events so that these FETs stay off and you don't have shoot through issues. So for safety and galvanic isolation, which is important in high-power solar inverter applications, low power, it's not as necessary. For high-power silicon carbide and IGBT-based designs, isolation is required. And we do have isolated gate drivers for both SiC and IGBTs that offer 5-kilovolt galvanic isolation. Here's an overview of the portfolio that we have, and you can see we have a number of devices, an SOIC 8-Lead narrow and wide, an SOIC 16-Lead narrow and -- or just wide, sorry. So the 8-Lead devices are going to have maybe just one additional feature for instance, like a split output through VCC undervoltage lockout or negative bias or active Miller clamp. Whereas what you'll see with the 16-Lead devices, it's a fully featured device, so it incorporates many different features and functions that you'll see shared among the SOIC 8-Lead devices. And we also have single channel as well as dual channel devices for half-bridge configurations. And then lastly, for our EliteSiC devices, we make it very easy to know which silicon carbide gate drivers to pair with your corresponding FETs. So you can see it featured over here on the left. Depending on your breakdown voltage, the RDS(on), the package type, and whether you're looking for a single channel or a dual-channel device, these are the gate drivers that we recommend. And you can see here with these prefixes, these numbers up in the left, which devices support things like negative bias turn off, desaturation protection and active Miller clamp, for instance. And that's it. So I believe -- we will jump into Q&A or Kyli will send us off.

Yes, of course. Thank you so much, Hunter, for this excellent presentation. Before we get to the Q&A, I would like to now ask our attendees to fill out our survey. I'm going to go ahead and send center that on the screen now. I would also like to point out that you can find today's slide deck in the related content box on your left.

All right. Now let's start our Q&A. During the presentation, we have received some questions, so we'll jump right in. If you would like to submit more questions, you can type them into the Q&A box on your right. First question that we have for you today is, can you discuss the RF emissions performance for onsemi SiC devices as compared to -- with your competition?

So offhand, I don't have any figures to speak to for the RF emissions performance. But I will tell you what. We have a list of the attendees, and I will reach out to provide you with that information after this webinar.

Wonderful. All right. Next question we have for you is do the modules include a decoupling capacitor to improve losses and RFI reduction?

They do not. So that is the discrete device that you would have to implement outside of the module.

Beautiful. All right. Next question. Could you please review the pros and cons of all-in-one units versus stand-alone devices again?

So sort of the pros and cons between all-in-one units versus stand-alone, it really comes down to customer tolerance. If you are someone who prefers or your end user is someone who prefers individual devices and only having to replace maybe one component versus an all-in-one device that encompasses everything into one package, if that unit fails, you have to replace the whole unit versus just maybe individual devices. But then again, you have the benefit of much simpler install and much -- typically much cheaper solutions. So for overall adoption of solar and residential applications, a lot of people are cost conscious. At the end of the day, more often than not, people, your end user, your end customer, and residential solar applications are going to opt for the cheaper solution. So often, you'll see solar string inverters win out over -- or all-in-one solar string inverters win out over discrete solutions.

All right. Wonderful. All right. Next question. What are the differences between standard transformer-based solar string inverters and transformer-less inverters that we see with many hybrids or all-in-ones?