ON Semiconductor Corporation (ON) Earnings Call Transcript & Summary

Hello, everyone. I'm Kyli Miller with onsemi, and I will be your moderator today. Welcome today's technology webinar on how to optimize our industrial drives and pumps with the latest advancements from onsemi. This webinar will help you better understand industrial drives, the types of and motors they control and the multiple industrial applications that are being transformed by onsemi's recent innovations. [Operator Instructions] This webinar will be recorded and posted at onsemi.com. You will be notified via e-mail when the recording is available. Now let's meet today's presenter. Hunter Freberg, works at onsemi as the PSG Technical Marketing Engineer. Hunter focuses on promoting PSG products for energy, infrastructure, industrial automation and automotive applications. Our second speaker today is Bob Card, who is the ASG Marketing Manager from onsemi and over 30 years' experience in the semiconductor industry. Now let's get started with our webinar.

Well, thank you very much, Kyli. So according to the Grand View Research, for industrial pumps and drives. The global market is $63 billion with a 4.9% cumulative average growth rate of 4.9% going from 2022 to 2030 in some of the industries that are served by the industrial drives and pumps include but are not limited to water and wastewater, also oil and gas. This includes drilling, refinery and transportation, also chemicals, chemical industry, pulp and paper, power generation and food and beverage, to name a few. Now in 2021, the Department of Energy in cooperation with Lawrence Berkeley National Laboratories published the 2020 MSMA, which is the motor system market assessment. It's a great document that does a deep dive of the market in the United States for industrial drives. And out of that came this block diagram of motor drive system that breaks it down into 5 components. You can see on the far left, we've got the AC input coming in that could be a single phase or 3 phase. And at the far right, you've got your loads that can be continuous or a variable load as well. And so the very first component is the controller, sometimes containing a variable frequency drive. And that's typical for when the loads are variable or also when you want to do a soft start, you may want variable frequency drive versus a fixed frequency. Then inside of that, you've got your typical AC to DC conversion and then you're a 3-phase motor drive inverter, which I'll be talking a lot more about. So that drives the electric motor and the electric motor typically drives the transmission and gearbox, which typically drives your equipment, which could be a pump or fan [indiscernible], which drives your distribution system. And then finally, your load. And today, we'll be mainly focusing on the 3-phase motor drive inverter. A little bit about the electric motor as well, doing a deeper dive into the controller. And I will apologize upfront this red -- this orange box here really should not include the motor because the motor is really the second component. But I'd like to put it there because it shows how the 3-phase motor drive inverter connects to it. So moving left to right, we've got the AC to DC conversion. You may or may not need power factor correction, typically PSC. What it does is it brings the current and voltage in phase. We can easily go out of phase with varying loads on the far right, and that can cause harmonics to go out on the main [indiscernible]. So moving left to right, you've got a DC voltage output, then you've got an MCU that could or could not be using the variable frequency drive. That MCU is going to be controlling. In this case, 3 half-bridge gate drivers or it could be 6 single-gate drivers. And what they do is they drive a high side, low sized switch for each one. So -- in this case, we've got a 3-phase motor drive. You get the U phase with a high side, low side switch. The V phase with the high side, low side switch. The W phase with a high side, low side switch for a total of 6 switches. These switches can be MOSFETs, IGBTs or wide bandgap, which we're seeing more of, and that includes silicon carbide as well as gallium nitride. The big takeaway for me for this slide is the controller, which is the first component of the 5 component motor drive is mainly filled with semiconductors. So one nice thing that this report published, the 2020 MSA is they captured their estimate on the total annual consumption of industrial drives in the United States, and there's pretty staggering numbers. There's over 546 thousand gigawatt hours, a price tag of $47 billion. And I think most importantly, for sustainability is over 387 million metric tons of CO2 emissions. When you run the numbers, that's just under 15% of the total U.S. electrical grid. That's nothing. That actually is astounded me that 15% of the total grid is being consumed by industrial drives. So it's a big -- it's a big part of the pot. They go on to also point out 3 annual savings opportunities captured in green. So the first one is the controller. The second one is the electric motor and the third one is the distribution system. And they go into more detail going back to the controller that this is mainly dealing with the VFD or different semiconductor advanced silicon IGBTs, silicon carbide and GaN. Secondly is the motor and some of the attributes there in the electric motor is improved load matching as well as advanced motor technologies like permanent magnets and synchronous reluctance to name a couple. And then finally, periodic maintenance for the distribution system. So when you gather and sum these 3 savings, and it comes to about 15.5% of total annual saving opportunities, and I want to point out that 50% of that is with the controller, which is mainly semiconductors. And so we're talking the semiconductors potentially can contribute to 45 -- savings -- annual savings of over 45,000 gigawatt hours, almost $4 billion and over 32 million metric tons of CO2 emissions. So that's a big deal. Personally, I take pride in that being someone in the semiconductor industry, and this really makes me happy. And it also points to the fact that since industrial drives consume up to close to 15% of the U.S. grid, every milli percent matters. That's a big theme in this webinar. It's all about efficiency. Okay. So when we look at the different power switches, and I'm going to look at them with this plot, the x-axis is the frequency and hertz, the y-axis is power and watts. And if you look at the silicon MOSFETs, they're typically low to mid-power applications. They do a great job, but they do kind of run out of gas a little bit under 100-kilowatt, and so that's when IGBT come in. They're scaled for high voltage, high power, really great bang for your buck for motor drive, but then silicon carbide even expands on that. It's higher voltage, higher current and mainly higher temperatures. They're very robust under high temperatures, faster switching as well. And what it allows you to do when you're dissipating all this power is that you can save money on your cooling strategy. And then finally, gallium nitride. Now gallium nitride or GaN can run quite fast theoretically up to 100 megahertz. It's a little less power. And we don't -- we typically see these in 5G base station power supplies or cloud power supplies, but we are starting to see them kind of creep into the industrial drive as well because of their efficiencies. There's no body dialed, so that helps a lot with the turn off -- the efficiencies [ with ] turn off. Now if we overlap industrial drives and pumps, you can see they fall across or they overlap all 4 power switch technologies. And I'll also include although I'm a little bit liberal with the -- I'm being a little bit liberal with the switching speeds, typically, they are, I don't know, 10 to 30 kilohertz, but you do see some that are slower and faster. So -- and then I'm going to add the power supply -- sorry, I'm going to add the horsepower on the y-axis because as we move forward, we're going to be talking about how the majority of the industrial drives fall into the category of more or less 100 to 500 horsepower, but they do go out to 2,000 horsepower. So they get pretty big. So this MSMA, 2020 MSMA came out with some really cool drive -- motor drive statistics in the United States. Specifically, what they did is they took the -- the y-axis is the motor drive count in millions, and they bind them 1 to 5 horse, 6 to 20 horse, 21 to 50 horse and 1 to 100 horse and so on, and so when you run the numbers, you could say, and this is cool, that almost 50% of the industrial drives are 1 to 5 horsepower, 77% are 1 to 20, 90% are 1 to 50 and 99.5% are 1 to 500. Now they did the same market analysis, the DOE and Lawrence Berkeley National Labs back in 2002, which is 18 years before they did this, the one that I'm referring to. And you can see some interesting trends roughly across the last 20 years. You can see the 1 to 5 horse is down about 16%. 6 to 20 is pretty flat, but you do see significant growth 44% from 21 to 50 horse, 97%, almost doubling 50 to 100 and then finally, down below 200 to 1,000, some almost a 2x growth. Now we're talking smaller numbers. If you double smaller numbers, sometimes you get still smaller numbers, but still very important to always keep your finger on the pulse of the growth trends, and that's what this is about. So Long story short, 1 to 20 horse is still steadily in the market for industrial drives, but we're seeing more growth for the larger pumps and drives. So for applications, it includes conveyor, fan control, pumps for liquid and gas, liquid agitation and also centrifuge. And many of these motors are a mix of ACIM, PMSM and BLDC, which I've captured up here, and I'll talk more about those on the next slide. But the point here is, is that they all share very similar topologies relative to the semiconductors, which is this 3-phase motor drive topology, the average going to the 6 pack of switches. Now there are some differences between ACIM and PMSM and BLDC, even though they share the same topology. And if you look at motor topology at a high level, they're grouped in 2 groups, you have DC on the right, and you have AC on the far left. Now your DC on the right, those are typically your brush DC motors. We have mechanical brushes that commutate electrically between the rotor and the stator. There's a lot of friction involved and wear and tear. So over the long run, typically versus AC motors, there are lower efficiency, higher maintenance, poor thermal performance, high electrical noise, moderate lifetime. There's still plenty of brush motors out there in the world that can be run, but if you really care about the efficiency, you care about those milli percent, you care about sustainability, you're going to be leaning more towards the AC motors. And so these AC motors are broken up into 2 camps. You've got asynchronous and synchronous, and with the majority of the industrial motor drives up to 500-horsepower are either 3-phase induction, single-phase induction or I should say, ACIM, which is AC induction motors up here. And then finally, down on the bottom right, for synchronous, it's typically either brushless DC or permanent magnet synchronous motors. Takeaway, they all pretty much share the same topology, which is a big story and a big narrative here for the semiconductors. Okay. ACIM versus BLDC PMSM. At a high level, so these are -- so I got the BLDC PMSM on the right, I've got the AC induction motor on the left. This is a cross-section of the motor, right? So you're looking at these little red -- I'm sorry, these green lines, those are the fins for cooling. And on the outside, I've got our stator and on the inside, I've got our rotor, these are in runners, examples. And you'll notice that they're more similar than different, quite frankly, especially for the stators. They have multiple windings on the stators and current is applied to the stator [indiscernible] creating this rotating magnetic field with Faradays law. And so they both share that property. Where they differ is in the rotor. On the far right, the BLDC PMSM use a permanent magnets for the rotor. And in contrast, the AC induction motor uses these multiple conductive bars constructed in curled squirrel cage like assembly. And so here's a side view of the squirrel cage, and you can see the bars of these conducted bars that go back and forth. And at the ends here, you see the ends of the bars. And then the image up on the top here for the AC induction motor, you see these orange -- these little orange circles here, those are the ends of the bars. In this case, there might be something like 24 bars, I didn't count. But yes. And so basically, when you go back to the BLDC PMSM, now you've got this intrinsic permanent magnet that's got its old north and south poles due the laws of repulsion and traction will the stator as you rotate the electromagnetic fields will force the router to spin either clocks or counterclockwise. And the important thing to take away is that the rotors equal the stator field, and so therefore, it's a synchronous motor. In contrast, with the ACIM is that the energy that you generate in the stators is induced onto -- into the conductive bars. And those conductive bars in the rotor then interact with the stator magnetic fields, the 2 fields interact and that motor spins as well. However, the rotor speed is slower than the stator of field. So there's some slip. And therefore, it is as -- so you've got asynchronous on the left, synchronous on the right. The big takeaway really is on the right, you have less losses especially copper losses with the BLDC PMSM. And you have more losses with the ACIM because you have to transfer that energy into the bars. And you lose -- there's some losses in that extra stuff. Okay. So in summary, beating a dead horse here, the rotor curves to be induced. The speed of the physical rotor must be slower than the stator. This difference between synchronous speed and rotor speed, operational speed is called slip or slip angle and the slip value is typically 2% to 6%, and that's why ACIM is considered a synchronous. And if you look at the comparison between the 2, the BLDC PMSM is much easier to start and stop and that's because the rotor weight is lower, the rotor inertia is lower. The repeatable stock accuracy is higher. The number of consecutive stop starts for a minute is higher versus ACIM because they tend to overheat. The efficiency is higher versus the ACIM basically, as we talked about in the previous slide, you have less copper losses. There's no slip angle. The form factor can be smaller. However, the big difference really is where the ACIM stands out is it's lower cost because you don't have to deal with the rare earth metals. And that's not nothing [indiscernible]. So you will see a mix of ACIM, BLDC and PMSM in the industrial drive and pump market. Now you can also -- you can do BLDC PMSM ACIM with single phase on the left, or you could do a 3 phase on the right. The 3 phase is typically more efficient and acquired a solution, and we'll be kind of focusing on that. This is a deeper dive into the 3 phases. You can see on the far right, we've got our motor in gray, and I have 3 halls there for capturing where the rotor is in its rotation or you could use a inductive physician sensor or encoder, which is more accurate like the NCS32100 or the NCV77320. That feeds back information into the processor, which is doing the control, the commutation control, that can be trapezoidal or full more, I guess, more complicated algorithms like [indiscernible] control. That -- so your PWM and these gate drivers. In this case, I've got 5K isolation silicon carbide gate drivers. I'm sort of shooting for more of a larger motor here or illustrating that, but you can use different gate drivers and I have a slide on that further down. So your PWM in these high-side, low-side switches. And then we could also have [ i-sensing ] for measuring the phase of the current of each phase and recommending the NCS2032 devices that have 7 megahertz of GaN bandwidth and super low input bias currents of a picoamp. We've got the NCP718 LDOs for powering the halls or your encoders or the MCU. And then we have this. The fly back here to generate this 20-volt rail that would be applicable for driving silicon carbide. And the PWM is sort of a duty cycling, which gives an averaging effect on the voltages that actually appear in the UV and W windings and that provides precise motor speed control. Of course, you can change the frequency of the PWM in their processor as well. And then the motor toric is a function of the current delivery to the windings relative to the permanent magnet strength. And I want to just make one more time to point out how semiconductors are contributing to tens of million of metric -- million metric tons of CO2 emission savings. Okay. So now we're going to jump to the gate driver selection. So I'm old enough to remember that you had 100-watt power, 95% efficiency, you're dissipating 5 watts, you can go home now. That's good, right? But now when we're talking about these bigger applications with higher power, hundreds of kilowatts, hundreds of horsepower, if not 1,000 horsepower, you're talking about huge amounts of power losses. So the bottom line is, every milli percent matters. It used to be 1% mattered, 2%, now milli percents matters, especially when you consider that just under 15% of the U.S. grid is consumed by industrial trials. Milli percents matter. I can't say it enough. So if your total power losses are the sum of your conduction losses plus your switching losses, okay? Your conduction losses are pretty straightforward through the switches, that's basically the -- when they're fully enhanced or turned on, you get your ID current is flowing through, that's your RDS on or [indiscernible]. When you're talking about your switching losses, it's a little bit more complicated. It includes the gate charge, it includes the reverse recovery charge, includes the input capacitance, the gate resistance and the Eon and Eoff in microjoules. So that's more complicated. The RDSon is pretty much a little more straightforward as RADAR. But they both contribute to that. Now when you've got an MCU that's trying to turn on these different switches, whether they're silicon, IGBTs or silicon carbide, they're going to need gate drivers in between because the MCUs can only swing to 0 to 3.3 volts at best, maybe 1.8 depending on the IO voltage. So you use a gate driver for silicon, you need to swing from 0 to 10 high level. For IGBTs, 0 to 15. Now, I will say you always want to read the data sheets of whatever switch you're using to get the exact amount of ideal voltage. These are generalizations. And then typically, silicon carbide is minus 3 to 18. That's how you're going to get your best efficiency by getting the right [indiscernible]. Now, for EliteSiC, you can switch our EliteSiC and that's the brand that we use for our silicon carbide EliteSiC. It works fine for a gate driver 0 to 15. But if you go to 0 to 18, you're going to reduce your conduction losses by 25% and your Eon losses by 25%. So that's not nothing, 3% for Eoff losses. And then also, you've got the your gate driver going from 18 volts to minus 3 volts, that results in 3% lower Eon losses and also 25% lower Eoff losses. So that's not nothing either. And so I do like this [indiscernible], I recommend it for anybody that's interested in silicon carbide, AND90204. And in there is this plot, and it discusses the -- this whole thing about negative turn off, it has the negative -- that's misspelled here. Negative gate bias voltage from 0 to minus 3 volts, and it is capturing the switching losses. And you can see that if you turn off at 0 volts here, okay? You're talking about 350 microjoules of switching losses. And then if you turn off at minus 3, you're talking about 250 [indiscernible], so you save 100 microjoules of energy every time you turn off. So that's also worth considering. Now this slide, I'm going to go into a little bit more details of what happens when you turn on and off a MOSFET or silicon carbide stat. I'm not covering IGBTs here. We just don't have the time. It's a little bit different, but it's similar. So here's your switch on the right. You've got the drain, you've got the gate, and you've got the source. And between the gate and source, you've got the capacitor, the CGS and you get the capacitors to CGD. And you also over here have the capacities between the drain of source. Those 3 capacitances are part of why you need a fair amount of heavy lifting for a gate driver to turn these switches on and off. You want to turn them off quickly. You don't want to turn them on and off slowly because when you turn them on and off slowly, you're going to dissipate more switching losses. However, as the flip side of that out, if you turn them off -- on and off too quickly, you can create some EMI, so what typically is done is there's a gate resistor put in between the switch on the right and the gate driver on the left. And that gate resistor will sort of tweak the value of that. So you find a sweet spot between EMI and switching as fast as you can. Okay. So we'll talk about time stay 1. That's when the BGS goes from 0 volts to the BTH here. The IG is at its maximum. The VDS doesn't change much, and the ID doesn't change much as well. We go to time stay 2. And now we've gone from the VTH to the beginning of the Miller Plateau here and during that time, the IG is dropped, the gate drive current. The BDS hasn't changed, but you'll notice now, the ID has gone from not flowing at all to flowing. This is the ID here going through this. That's the whole goal to turn it on so that ID can freely flow with a low RDSon. Time stay 3, we go through that Miller Plateau, and that's where you don't want to spend a lot of time. The Miller Plateau -- you want to get through that as quickly as possible to reduce your switching losses. And now your VDS has dropped and your ID is flowing fully. And then when you get to time stay 4, that's where you maximize your VGS and which is where you have the minimal RDSon. And that's what you want, minimal RDSon, so this ID, which is [indiscernible], does not dissipate a lot of power. And you also can go below -- no, sorry. So that's -- yes, that's your maximum VGS gives you your lowest RDSon. Now when you turn off, it's basically the reciprocal you're starting here with the BGS at the high level, you go down to the Miller Plateau during time stay 1. Your IG is peaks here and lowers here. Your VDS doesn't change much nor does your ID until you get to time stay 2, where you're going through the Miller Plateau with your gate driver and now your VDS goes back high, your ID -- I shouldn't say start flowing. Your ID now through time stay 3, goes from a high level to 0 and now we're just getting through the BTH of the gate drive. And then finally, time stay 4, you reach 0 volts or below 0 volts the case of silicon carbide, and now your gate drive is minimal. Your BDS is high. And now the switch is turned off, ID is practically 0, and that's your maximum RDSon. So the switch is essentially over. Okay. So you also want to consider your gate drive calculation relative to just usually pick a switch first, then your gate driver. So this is a first order approximation for a gate drive calculation. The gate drive is essentially -- IG is the total -- the QG total divided by the on and off time and the total gate charge versus the QG total is the amount of charge in coulombs that needs to be injected into the gate electrode to turn the MOSFET on fully. So I'd like to immediately go to this plot and the data sheets for the switch. In this case, I'm using a 1,200 volt, 22 milliohm, 68 amp-rated silicon carbide switch. And on the x-axis, I've gate charging nanocoulombs. In the y-axis, I have got DGS and volts, and you can see the total swing is 21 volts, minus 3 to 18. We turn that switch on. We get to the VTH of 2.72 volts at 25 degrees C, just under 20 nanocoulombs, then we go to the Miller Plateau right around 7 volts, 35 to 70 nanocoulombs, and then we go all the way up to the BGS of 18 volts, we have a lowest RDSon at 140 nanocoulombs. And so if I use my NCP51561, which is one of our silicon carbide gate drivers, it's rated for peak current sourcing. That's what you use source current when you turn the switch on of 4.5 amps and a peak [indiscernible] when you turn the switch off, that's 9 amps. And so when you run the numbers, for 140 nanocoulombs at 4.24 amps of gate drive for turn on, you can expect to be turning on somewhere 30 to 33 [indiscernible]. That just gives you a first-order approximation for that. Now I do want to talk about galvanic isolation and safety. And typically, you get your MCU, go into your gate driver, going to your switch. And it's not a fine -- it's not an exact line to [ sand ], but roughly for lower power, I'm going to say below 2.5 kilowatt, every application is different. Customers have a different pain point there. But somewhere in that ballpark, you don't really need isolation. But when you get somewhere around over 2.5 kilowatt, you do want to consider isolation, which is isolation from input to output of the gate driver. And we use galvanic isolation, which is using inductors. And what that does is it provides safety for the user in case you've got this low voltage domain here and a higher voltage domain here, I'm a mercury's log eye, and if something goes wrong, we could have shorts, you could have a problem. You just never -- you want to have some kind of protection built on to prevent any safety issues. This slide speaks to our BLDC or could be PMSM or ACIM, high voltage or low voltage MOSFET gate driver portfolio. So on the x-axis, we have the gate drive, source and sync from 250 milliamps to 6 amps. And I'll just say you need more gate drive for lower RDSon because lower RDSon switches have higher capacitance and higher -- takes more current to drive them. And then the y-axis is essentially the motor voltage, and everything in orange is a 3 half-bridge gate drivers, you only need one of these to drive a 6-pack or in gray. These are half-bridge gate drivers. So if you're driving a 6-pack inverter, you need 3 of these. And then the asterisk is the built in under voltage lockout for protection. And then some people say, hey, Bob, they reach out to me and they ask me, what do you recommend for a gate driver for silicon carbide. So I have our EliteSiC MOSFET group by -- on the far left, group by breakdown voltage from 650 up to 1,700. Then the next column is the RDSon ranges at room temp. And then the third column is the packaging, which is always important for switches. And then when you -- and of course, Hunter will go through a lot of detail with this. You can do it. You can drive, as I mentioned before, either the single channel or 2 channel. The single channels, I recommend a couple of different devices or families, really, the 5709 or the 5700. And then for 2 channel with the various gate drives that -- gate drive current that I've listed here, I've got the 5575 family and the 5156 family. Now the last parameter on the dual, I've got 5 nanoseconds, 20 nanoseconds. That's the total propagation delay matching. And so when you look at a half-bridge gate driver, you've got the top channel, which is the A channel and the bottom channel is the B channel. In a half bridge application, the biggest no, no is to have both of these switches turned on at the same time. That's a huge no, no because you've got a high voltage going right to ground. And so there's built-in protection, that's also called shoot-through current, and there's built-in dead time for these gate drivers, so that doesn't happen. However, the lower the number is for propagation delay matching, the easier it is to manage that shoot-through current. That's what we're trying to [indiscernible]. And then -- and these are very -- both of these are very low numbers, 5 nanoseconds and 20 nanoseconds. So we've also got support for negative bias turnoff, which I mentioned earlier, to save on the Eoff losses, the desaturation for the gate drivers, that's overcurrent protection. And then finally, the active Miller clamp, and that clamps the VGS preventing accidental turn on during intended turn off. And then the B signifies the automotive [ coil ] -- and then I'm going to take it away -- take away it away, Hunter. It's all yours, buddy.

Thank you, Bob. So next, I'm going to go into some recommendations for switch selection for various motor controllers. We talked a lot about variable frequency drives at the beginning, but there are some additional devices for lower-voltage motors like electronic speed controllers. So first and foremost, I'll talk about electronic speed controllers or ESCs. And you can see featured here off to the right, sort of the major blocks for the ESC. So you have some kind of DC input, you have your micro, you have the gate drivers that Bob just covered as well as your switches, your 3 high side and your 3 low-side switches for controlling each of these windings on your motor. So again, ESCs are intended for a DC input. It's typically for BLDC motors. And for BLDC motors that have a motor voltage of approximately 96 volts or less, usually ranging from 12 to 96 and 12-volt increments. And typically, the motor power of these is going to be not extremely low, but a little bit lower. So typically, you'll see about up to 5 horsepower. And then for the various common motor voltages that you'll see, you usually see 12, 24, 48, 96. And then over here in the column on the right, you can see the recommended switch breakdown voltage that we have depending on the DC input or DC bus or your motor voltage, which should ideally match that in this case. So when you're selecting the appropriate switch, what we recommend is typically the current rating of that switch be 2x the pace current for the motor and the voltage rating of that switch should be at least 1.5x your voltage bus to account for any kind of transients that you may encounter. So just as an example, for a DC motor at 48 volts, we recommend an inverter switch breakdown voltage of 80 volts, which you can see called out here in this block on the right. So ultimately, for these ESCs and for BLDC control for 96 volt motors and lower, we recommend silicon MOSFETs. These are the ideal switch in this application. Next, I'll touch on variable frequency drives and switch selection for these devices. So VFD, it's very similar in nature to an ESC. They're both controllers or AC motors, but the difference is that you have this AC input, some kind of AC to DC rectification and power factor correction and then this block here is essentially going to be similar or the same between a VFD and ESC. It's just in a VFD. It will typically be with higher power, higher voltage switches. So again, your VFD is going to handle an AC input, typically 3 phase, but there are some single-phase AC input VFDs. For AC motors that are 115 volts or higher, and for motor power that's typically 1/4 horse could go all the way down to theirs, what you might see and go all the way up, like Bob said, into 2,000 horsepower. So the recommended minimum switch rating, again, very similar. The current rating is going to be 2x the phase current and the voltage rating is going to be 1.5x your DC bus voltage or in this case, your DC link voltage. So for sizing the motors, depending on your input voltage, you'll typically see single phase 120 going all the way up to 3 phase 480, 3 phase 600. You might see in these high-power industrial applications. And the corresponding common NEMA standard motor voltages. This is a standard set by NEMA, which is a North American Association for standardizing these motor voltages, and you'll see 115, 200, 230, 460 and 575. That's the voltage rating that you'll see on the nameplate for that motor. Now for the DC link after rectification, it's going to be 1.414x your input voltage and you can see those values called out here. And then depending on that DC link and then obviously the voltage of your motor, that will decide your inverter switch breakdown voltage very similarly to the ESC. And just as an example, for a 3-phase 480-volt motor or 3-phase 480-volt input, 460-volt motor, we're going to recommend 1,200-volt switches. So in this case, IGBTs are a very good fit. They have lower conduction losses and lower price typically as compared to silicon MOSFETs of a similar voltage like super junction vets. But if you want the absolute best performance, you should consider switching to on semi-silicon carbide MOSFETs. So next, I'll go into a product overview of the various families that we have starting off with our silicon MOSFETs, sort of the technology and the packaging advancements around those devices, our best-in-class silicon power trends MOSFETs, some of the lowest conduction losses in industry as well as our latest T10 MOSFETs. So moving through the years, starting all the way back in 1998, we have our very first power trench 1, trench JFET. And then from 2004 to 2005, we moved to a shielded gate or a shielded split gate power trench FET. And by doing this, we were able to reduce the [indiscernible] capacitance by 50%, which helps with your switching losses. So moving all the way down to 2022 from 1998 to 2022, we've sought to improve these devices to reduce the junction capacitance, to improve the switching losses and reduce the on resistance to improve your conduction losses. And again, our latest T10 FETs are going to have the highest performance. So why these shielded gates are preferable to trench gate, again, you have lower on-state resistance, which improves your conduction losses from trench to shielded gates. You have lower gate charge, which improves your switching losses, your driver losses moving from trench to shielded gate. And then you have much improved voltage life tolerance and tolerance to bringing due to this inherent snubber-like effect that occurs with the shielded gates. And you can see here in red, you trench gate where you have excessive ringing and blue, the shielded gate is a much smoother transition. For the power packages that we have for our silicon MOSFETs, we do have our legacy devices. These are existing packages in industry, and we began to move to much higher density much more thermally, efficient and higher-performing MOSFETs. So you have smaller packages like SOAFLs, Power88s, [ TL lead list ] and [ LF Pack ], [indiscernible] [ 3x3s ] much, much smaller packages, much higher power density. But for the greatest thermal performance, we have devices that are dual cool. So there's an exposed pad that you can sink heat away from the device and mounted heat sink on top as well as your standard dissipation through the PCV through your leads. We have sourced down devices, the source is down instead of the drain as well as top cool devices. And in this case, you just have that exposed pad and the leads are thermally isolated. So you just have sinking heat up and away from the system to improve your system reliability. For our 30 to 40-volt MOSFET portfolio in these devices that are intended for motor drivers, these 2 part numbers called out here, this T6 FET with a logic gate as well as this T6 FET that's available in a standard as well as a logic gate. That's a -- standard is approximately a 10-volt turn on, as Bob covered and logic is about 6. And with these devices, we have the lowest RDSon and therefore, lowest conduction losses currently in this particular package or their respective packages in the industry. And again, that results in higher efficiency, potentially higher power motor drives. And then 60 to 150 volts, you can see the various devices that we have as well. Again, available in standard as well as logic gates and dual cool for the highest performance and DFNW or wettable flank devices to improve reliability and testability of your designs. But ultimately, the fact that we have devices, very high performance that range from 30 volts all the way up to 150 volts means that we have a full portfolio that can meet all of the applications or all of the typical motor voltages that you'll see for ESCs, for instance, in the industrial motor drive market. Lastly, for our T10 technology, these latest devices, they're more efficient, they're powerful and they're a reliable solution. And the reason for that is due to a few different factors. So we have a 30% to 40% reduction in the specific resistance over our previous technologies, which improves power density. We have a 2x reduction in these various switching parameters, which reduces switching losses and improves performance there. We have a softer recovery diode and lower reverse recovery charge, which reduces bringing overshoot and EMI and then 10% higher unclaimed inductive switching capability, which improves the reliability and the robustness of your devices. And then you can see here in the bottom right, this box that is highlighted, our T10 technology is separated into 2 categories: [ T10S ] and [ T10M ], and those AM devices or those devices that are optimized for motor control. Again, improved conduction losses, better body diode softness and higher reliability. Next, I'll touch on our Field Stop VII, or FS7 IGBTs, which is our latest generation IGBTs where we're targeting high efficiency and high power density. They're available in FS7, R-series or medium speed. These are tailored towards lower VCE(sat), and that would sort of be the analog to RDSon that you might see with a MOSFET. For IGBTs, it's your collector to your emitter saturation voltage, whereas you have your FS7 fast devices as well. This is the S-series and this is tailored for lower switching losses, these Eoff. And you can kind of see the trend here for us as well as some of our competitors and how the curve lines out as far as you have better VCE(sat), you typically have higher switching losses. You have better switching losses, you typically have higher VCE(sat). But you can see with our 1,200-volt medium-speed Field Stop VII device to have 1.65 volts at maximum operating temperature of 175 degrees Celsius, very, very low VCE(sat) and therefore, conduction losses. So again, for those applications, the Field Stop VII devices that we care about today in this presentation are those low VCE(sat) devices for motion control. And then as for the devices and the packages that we have available, you have your standard through-hole devices, it's feature here and a TO-247-3 in [indiscernible]. And we also have the power TO-247, you might see TO-247+. There are some other names, but essentially, it eliminates the hole here, so that you have more area to mount your thermal pad to. Also have them available in gel field modules as well as intelligent power modules with integrated functions like integrated gate drive for both high side and low side, switching, temperature sensing and current protection -- for various protection features. For our Field Stop VII portfolio for our discretes, you can see here the devices that are tailored towards these motor control applications, again, the R designation is for that low VCE(sat). And these are short circuit rated devices. They're very rugged and again, low VCE(sat). The diode selection for this is very low forward voltage. And the rating of these devices ranges from 40 to 160 amps for the entire portfolio. That's it for IGBTs. Next, I'll go into our EliteSiC MOSFETs and modules that you may use in these higher power motor drive applications. So first and foremost, we always have to talk about why silicon carbide and why is it preferred over silicon or even IGBTs. So as compared to silicon, you can see here the comparison of some key material properties. So first and foremost, let's talk about the band gap. Silicon carbide is a wide bandgap material. So that means that it has a higher band gap or moving from 1.12 electron volts to 3.26 electron volts, so about 3x higher, and that results in the critical electric field being about 10x higher with silicon carbide. So as a result, you have much thinner epitaxial layer and therefore specific resistance. And you can also develop devices that are much higher voltage -- can withstand higher voltages due to that critical electric breakdown field. We also have much higher current density devices due to the saturated electron velocity. It's about 2x higher in silicon carbide, basically details how quickly the electrons can move through the material. So due to that, there's a direct correlation to higher current density, higher saturated electron velocity as well as higher -- or faster switching as possible. And then lastly, and a huge benefit of silicon carbide is the approximately 3x higher thermal conductivity, which results in faster heat removal and less complex cooling systems for -- for instance, you might have had water cooled, you move to forced or natural convection or just smaller heat sinks overall. Our 650-volt silicon carbide MOSFET portfolio can be featured here in TO-247-3-lead, 4-lead with the added Kelvin source, D2PAK7 lead, that's a surface mount device, and then TO-leadless and PQFM88. These are also surface mount devices with slightly lower volume and surface area and ranging from 12 to 78 milliamp RDSon at that 18-volt gate drive. For our 1,200-volt MOSFETs for our third-generation family, again, TO-247-3-lead, 4-lead and D2PAK7 lead. This is what's released at the moment and very similar to the IGBTs, how you have in R-series -- and in S-series. We have an S-series and a P-series. And this P-series are the devices that are optimized for higher short-circuit withstand time, which is necessary in these motor control applications and higher power handling capability. That's it for our discretes for our modules. Essentially, we aim to simplify development for our end customers with modules due to investment into enhancing these packages in the technology. So it's a reduced cooling effort and extended lifetime due to the optimized die size and the layout within the module, can also provide these with a pre-applied thermal interface material or without. They have enhanced robustness in harsh environments due to the patented termination structure. We also have off-the-shelf as well as tailored solutions. A highlight product is going to be this 1,200 volt, 3 and 4 milliohm half-bridge full SiC module. This is an industry standard pin-out. And we, at the moment, have the lowest RDSon in this particular half bridge in this package configuration. And ultimately, we're aiming to enable customers shorter time to market, ensure quality and reliability and scalability in their designs. So some use cases for these different devices. TO-247-3-lead is going to be a simple drop-in for an IGBT. TO-247-4-lead includes a Kelvin source or a driver source pin that separates the paths between power and driver signals, which improves your switching losses, about 60% improvement in your turn on losses. D2PAK7 lead, which is the surface mount device that also features that Kelvin source, but you have the issue of heat being dissipated through the PCV. And then in the highest power density applications we recommend modules, where you will either press these in with the press fit pins into your board or with solderable pins and then mount the heat sink on top. So for our intelligent power modules and those devices that I referenced earlier, where we have integrated gate drivers, both high side and low side, built in temperature sensing and protection, for instance, overcurrent protection, under voltage lockout and shoot-through prevention and very low thermal resistance substrates, direct bonded copper, like with aluminum oxide, aluminum nitride for higher performance. And then for the SPM 45, these come in a ceramic. You can see in green, the devices that we have released, starting all the way down with the SPM 7 [ uni-FETs ]. So these are 500-volt and 250-volt modules. And then as we scale in power, we move into utilizing IGBTs. So higher power, higher voltage going all the way up to the SPM 49 devices, which is a bigger package. You can see the recommended power level for each of these modules and how this scales all the way down to 1/4 horse for the SPM 7, up to 13.4 horsepower for the largest package, the SPM 49. And our plans for the future is to integrate Field Stop VII, 120-volt devices as well as silicon carbide into these modules for again, higher power, higher efficiency, and we do have engineering samples available for all of these modules at the moment. So that's it for the switches and the modules. Lastly, I'll touch a little bit on current sensing for motor drives. So we have these industrial applications that we largely covered, you'll maybe have some kind of controller for like a VFD or an ESC. And for these large industrial applications, typically, it's going to be HVAC, like an outside air conditioner or AC induction motors and process automation and measurement. And in both cases, you'll typically have some kind of low-side current sensing, maybe high side as well. So for current sensing in these motor control systems, low-side current sensing, the current can be measured on the voltage bus or independently on each phase. However, for high-side sensing, the power needs to be monitored on each phase to detect a short or a short circuit event before the motor is damaged. What we've done with our portfolio over the years is we've trended towards lower offset voltage devices. And that really is the key parameter for high-efficiency current sense [indiscernible]. So as you aim for higher efficiency, you aim to reduce the voltage drop across the shunt resistor, that's the resistor that's used for measuring the current. And if you have a lower shunt drop, you have to have higher accuracy so that you can accurately measure that current. And therefore, we move all the way from 7 millivolts on some of the older devices to 10 microvolts, very, very, very high accuracy. And this is essentially the difference between these 2 inputs for your [indiscernible]. So ultimately, moving to a lower voltage drop across that shunt is going to reduce power dissipation and improve your system efficiency. So that's it. Greatly appreciate everyone's time. And now I believe we will move to Q&A.

All right. Thank you for that wonderful presentation. So we actually did run out of time for questions today. But we do have Bob and Hunter's e-mails listed within the platform in case you do have any questions. So thank you very much, Hunter and Bob. And on behalf of onsemi, I would like to thank everyone for attending, and I wish you a nice rest of your day.